Contribution Oral presentation
Past & Future of the Silicon-On-Insulator Pixel Detector
We have been developing a monolithic pixel detector process using a Silicon-on-Insulator (SOI) technology. The SOI wafer is composed of a thick, high-resistivity substrate for the sensing part and a thin Si layer for CMOS circuits. In the 1990's, a few group tried to develop the SOI detector, but all the project was stopped without success. We have developed many new techniques to solve the difficult issues in the SOI detector. Now we have many projects to use the SOI process not only in high-energy physics but also in the fields of X-ray, material science, medical, etc. Past development and recent progress of the SOI technology are presented.