Speakers
Mr
Aleksandr Gentselev
(Budker INP, Novosibirsk, Russia)
Mr
Aleksey Lemzyakov
(Budker INP SB RAS)
Dr
Boris Goldenberg
(Budker INP SB RAS)
Description
The design and manufacturing method of x-ray masks, which have high-contrast in x-ray spectral range of shorter wavelengths (λ ≈ 3÷7 Å), are described. This masks can be a tool to form a resistive mask with a thickness of ~20÷150 microns and also can be used as intermediate mask for the fabrication of LIGA-masks for deep X-ray lithography.
The manufacturing method is based on silicon planar technology. Two types of masks were made with mainly aluminum membrane. The method ensures the manufacture of x-ray masks with multilayer (titanium, aluminum and silicon layers, the thickness of which can vary in a fairly wide range) bearing membranes.
Primary author
Mr
Aleksandr Gentselev
(Budker INP, Novosibirsk, Russia)
Co-authors
Mr
Aleksandr Gelfand
(Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences)
Mr
Aleksey Lemzyakov
(Budker INP SB RAS)
Dr
Boris Goldenberg
(Budker INP SB RAS)
Dr
Fedor Dultsev
(Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences)
