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SUMMARY:Past & Future of the Silicon-On-Insulator Pixel Detector
DTSTART;VALUE=DATE-TIME:20140225T073000Z
DTEND;VALUE=DATE-TIME:20140225T075500Z
DTSTAMP;VALUE=DATE-TIME:20260613T061845Z
UID:indico-contribution-14@indico.inp.nsk.su
DESCRIPTION:Speakers: Yasuo Arai (High Energy Accelerator Research Organiz
 ation (KEK))\nWe have been developing a monolithic pixel detector process 
 using a Silicon-on-Insulator (SOI) technology.\nThe SOI wafer is composed 
 of a thick\, high-resistivity substrate for the sensing part and a thin Si
  layer for CMOS circuits.\nIn the 1990's\, a few group tried to develop th
 e SOI detector\, but all the project was stopped without success.\nWe have
  developed many new techniques to solve the difficult issues in the SOI de
 tector.\nNow we have many projects to use the SOI process not only in high
 -energy physics but also in the fields of X-ray\, material science\, medic
 al\, etc.\nPast development and recent progress of the SOI technology are 
 presented.\n\nhttps://indico.inp.nsk.su/event/0/contributions/14/
LOCATION:
URL:https://indico.inp.nsk.su/event/0/contributions/14/
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