Synchrotron radiation induced photo etching of cesium iodide
Synchrotron radiation induced photo etching of cesium iodide (CsI) was investigated. The model for photo etching was proposed and compared with experimental data. Dependence of the etching rate on the SR spectrum and on the substrate temperature were revealed. We estimate possibility of manufacturing of high aspect ratio microstructures of CsI scintillation material.
The work was done using the infrastructure of the Shared-Use Center “Siberian Synchrotron and Terahertz Radiation Center (SSTRC)” based on VEPP-3 of BINP SB RAS (Novosibirsk, Russian Federation).