25-28 June 2018
Budker INP
Asia/Novosibirsk timezone
- SFR2018@inp.nsk.su
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Contribution Poster
THz radiation aplication
Pump-Probe setup at the NovoFEL facility for measurements of carrier relaxation processes in semiconductors
Speakers
- Ms. Valeria KUKOTENKO
Primary authors
- Ms. Valeria KUKOTENKO (Institute of Nuclear Physics)
Co-authors
- Ms. Yulia CHOPOROVA (Budker Institute of Nuclear Physics)
- Prof. Boris KNYAZEV (Budker Institute of Nuclear Physics)
- Mr. Vasily GERASIMOV (Budker Institute of Nuclear Physics SB RAS)
- Mr. Roman ZHUKAVIN (Institute for Physics of Microstructures)
- Mr. Konstantin KOVALEVSKY (Institute for Physics of Microstructures)
Content
The detection mechanism of photoconductive detectors is the generation of free charge carriers upon absorption of photons whose energy is larger than the ionization energy. The relaxation of these carriers down to their ground state ultimately limits the speed of response as well as the sensitivity. A thorough understanding of the relaxation mechanism can help to improve the performance of detector devices. In case of extrinsic germanium detectors the ionization energy is in the THz range. In this paper we investigate the relaxation of excited carriers in n-Ge:As pumped into the lowest excited state 2p0 in a single color pump probe setup at the Novosibirsk free electron laser.