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Contribution Poster

THz radiation aplication

Pump-Probe setup at the NovoFEL facility for measurements of carrier relaxation processes in semiconductors

Speakers

  • Ms. Valeria KUKOTENKO

Primary authors

Co-authors

Content

The detection mechanism of photoconductive detectors is the generation of free charge carriers upon absorption of photons whose energy is larger than the ionization energy. The relaxation of these carriers down to their ground state ultimately limits the speed of response as well as the sensitivity. A thorough understanding of the relaxation mechanism can help to improve the performance of detector devices. In case of extrinsic germanium detectors the ionization energy is in the THz range. In this paper we investigate the relaxation of excited carriers in n-Ge:As pumped into the lowest excited state 2p0 in a single color pump probe setup at the Novosibirsk free electron laser.