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SUMMARY:Carrier dynamics in doped Ge measured at the free electron laser f
 acility FELBE
DTSTART;VALUE=DATE-TIME:20160706T080000Z
DTEND;VALUE=DATE-TIME:20160706T082000Z
DTSTAMP;VALUE=DATE-TIME:20260711T054350Z
UID:indico-contribution-1159@indico.inp.nsk.su
DESCRIPTION:Speakers: Nils Dessmann (Humboldt-University Berlin)\nCooled g
 ermanium (Ge) photoconductive detectors are one of the most sensitive dete
 ctors at terahertz (THz) frequencies. They are widely used in laboratory s
 pectroscopy and imaging experiments. The speed of a Ge photoconductive det
 ector is set by technical limitations such as the bias circuit\, the geome
 try of the detector crystal and the electric field applied to the .detecto
 r. The recovery speed of the detector material is\, however\, fundamentall
 y limited only by the lifetimes of the intraband relaxation of the free ch
 arge carriers within the valence or conduction band and by band-to-impurit
 y relaxation (capture) down to the impurity ground state. Therefore\, capt
 ure and intraband relaxation processes have been measured for different do
 pants in uncompensated and compensated n- and p-type Ge by a pump-probe te
 chnique at the free electron laser facility FELBE.\n\nhttps://indico.inp.n
 sk.su/event/3/contributions/1159/
LOCATION:Budker INP Parallel session Hall
URL:https://indico.inp.nsk.su/event/3/contributions/1159/
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