BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//CERN//INDICO//EN
BEGIN:VEVENT
SUMMARY:Application of ELN-200 in deep X-ray lithography
DTSTART;VALUE=DATE-TIME:20160705T090000Z
DTEND;VALUE=DATE-TIME:20160705T100000Z
DTSTAMP;VALUE=DATE-TIME:20260819T053059Z
UID:indico-contribution-1204@indico.inp.nsk.su
DESCRIPTION:Speakers: Vladimir Nazmov (Budker Institute of Nuclear Physics
 )\nThe negative tone electron beam resist ELN-200 has been developed in 80
 th years of the 20th century for thin film patterning. The sensitivity of 
 the resist to X-rays has also been studied [E.S.Gluskin\, A.A.Krasnoperova
 \, G.N.Kulipanov\, V.P.Nazmov\, V.F.Pindurin\, A.N.Skrinsky\, V.V.Chesnoko
 v\, Experiments on X-ray lithography using synchrotron radiation from the 
 VEPP-2M storage ring\, Nuclear Instr.Meth. in Phys.Res.\,v.208(1983) 393-3
 98]. In the actual work\, the X-ray lithographic properties of the resist 
 have been studied after 33 years of storage. It was established that the c
 ontrast and the sensitivity of the resist to X-rays are not changed. The c
 onditions of both formation of thick resist layers and manufacturing of hi
 gh aspect ratio microstructures using hard X-rays are developed. The micro
 structures of up to 70 um in height have been manufactured. The roughness 
 of vertical sidewalls of the microstructures doesn't exceed 50 nanometers.
 \n\nhttps://indico.inp.nsk.su/event/3/contributions/1204/
LOCATION:Budker INP 2nd and 3rd floors
URL:https://indico.inp.nsk.su/event/3/contributions/1204/
END:VEVENT
END:VCALENDAR