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SUMMARY:Spatial microstructure of multilayered heterosystems\, containing 
 Ge quantum dots molecules in Si on the stages of their nucleation and grow
 th by EXAFS spectroscopy
DTSTART;VALUE=DATE-TIME:20160705T090000Z
DTEND;VALUE=DATE-TIME:20160705T100000Z
DTSTAMP;VALUE=DATE-TIME:20260819T050231Z
UID:indico-contribution-1208@indico.inp.nsk.su
DESCRIPTION:Speakers: Simon Erenburg (Nikolaev Institute of Inorganic Chem
 istry SB RAS\, Budker Institute of Nuclear Physics SB RAS)\nThe systems wi
 th interacting quantum dots (QDs) (in particular\, quantum rings (QRs) or 
 quantum dots molecules (QDMs) have attracted  much attention both as groun
 d for studying coupling and energy transfer processes between “artificia
 l atoms” and as new systems\, which substantially extend  the range of p
 ossible applications of QDs.\n\nSome of the EXAFS spectra above Ge*K*- edg
 es were measured at the VEPP-3 storage ring (beamline 8) of Siberian Synch
 rotron and Terahertz Radiation Center (SSTRC) of the Budker Institute of N
 uclear Physics (BINP SB RAS\, Novosibirsk\, Russia). Other part of the spe
 ctra was measured at the ESRF (Grenoble\, France). The high energy resolut
 ion fluorescence detected HERFD-XANES and EXAFS experiments have been perf
 ormed at 12K at the beamline ID26 or ID20 equipped by 5-analyzer x-ray emi
 ssion spectrometer. \n\nMicrostructural parameters (interatomic distances\
 , coordination numbers\, and Debye–Waller factors) were determined by me
 ans of EXAFS spectroscopy consistently on the stages of  nucleation and gr
 owth multilayered  heterosystems\, containing GeSi quantum dots molecules 
 (QDMs). The relationship between the variations in microstructural paramet
 ers and the morphology of superlattices and symmetric assembles of QDs was
  established.\n\nIn accordance with the results obtained previously for qu
 antum dots SiGe it was found for QDMs\, that distortion at the interfaces 
 leads to a decrease of  Ge-Ge interatomic distances on $\\sim0.03$ Å. It 
 was established for the samples with stoichiometric formula $Ge_{x}Si_{1-x
 }$\, (0.25 \n\nhttps://indico.inp.nsk.su/event/3/contributions/1208/
LOCATION:Budker INP 2nd and 3rd floors
URL:https://indico.inp.nsk.su/event/3/contributions/1208/
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