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SUMMARY:Structure and properties of ZnSxSe1-x alloy nanostructures embedde
 d in anodic alumina membrane
DTSTART;VALUE=DATE-TIME:20160705T090000Z
DTEND;VALUE=DATE-TIME:20160705T100000Z
DTSTAMP;VALUE=DATE-TIME:20260313T112219Z
UID:indico-contribution-1262@indico.inp.nsk.su
DESCRIPTION:Speakers: Andrey Chukavin (Physical-Technical Institute of Ura
 l Branch of RAS)\nZnSxSe1-x alloys\, as an important member of II–VI ter
 nary semiconductors\, have attracted significant interest until now due to
  their variable band gap\, spanning from 2.7 eV to 3.67 eV\, which makes t
 hem appropriate for developing short wave length LEDs and laser diodes ope
 rating entirely in the blue–violet region. Recently\, the ZnSxSe1-x allo
 y nanostructures were synthesized by a variety of methods such as chemical
  vapor deposition (CVD) and metal organic chemical vapor deposition [2-4].
  The electronic structure and band gap of ZnSxSe1-x were also discussed [5
 ]. The design of ZnS ySe1-y/GaAs (001) heterostructures and their dynamica
 l X-ray diffraction were reported [6\,7]. It is worthy to note that the 1D
  ZnSxSe1-x-based ZnO/ZnSxSe1-x core/shell nanowire arrays\, ZnO/ZnSxSe1-x/
 ZnSe double-shelled heterostructure and ZnS/ZnSxSe1-x nano-heterostructure
 s have also been synthesized by chemical vapor deposition method or magnet
 ic force assistant growth technique\, which exhibit efficient visible ligh
 t absorption\, enhanced photoelectrochemical performance and integrating e
 mission property\, respectively [8–10]. However\, the data on the optica
 l absorption and photoluminescence spectra yielded different results for t
 he ternary compounds produced by different methods\, and understanding of 
 the physical mechanism leading to this controversy is still not achieved.\
 nThe semiconductor nanostructures in dielectric matrixes are of current in
 terest due to absorption and luminescent properties improved in comparison
  to thin films of materials [11\, 12]. In nanocrystals\, the surface-to-vo
 lume ratio is considerably large\, therefore there is a high contribution 
 of surface in the luminescence properties. The unsaturated bonds on the su
 rface create band-gap states that can easily capture the excited electrons
  and holes and relax the energy in non-radiative ways [13]. In addition\, 
 matrix isolation allows to protect nanostructures from external influences
 .\nIn this work we for the first time have successfully synthesized alloye
 d ZnSxSe1–x nanowires embedded in a anodic alumina membrane via thermal 
 evaporation of the mixture of ZnS and ZnSe powders. Various compositions c
 an be easily obtained by changing the mole ratio of ZnS to ZnSe in a sourc
 e material. The X-ray diffraction patterns show that the lattice structure
  of these nanostructures is cubic ZnSe-like\, as S atoms replace Se and na
 nostructures compositions correlate with their initial S/Se ratio. Chemica
 l composition was controlled by XPS method. Optical absorption spectra sho
 w that band gaps of the alloy cover the entire range from 2.7 eV to 3.67 e
 V by changing the component ratio\, in agreement with literature. The stud
 y of the local atomic structure was carried out via EXAFS method. The set 
 of structural parameters\, namely the interatomic distances and correspond
 ed coordination numbers\, were established. All possible structural models
  were discussed in detail. Additionally ZnSxSe1–x samples were character
 ized by the TEM\, EDX and XPS methods. The data obtained by all the method
 s are in a good agreement.\n\n 1. Y. Liang\, H. Xu\, S. Hark\, // Cryst. G
 rowth Des. V.10\, P.4206–4210\, 2010\;\n 2. S. Park\, H. Kim\, C. Jin\, 
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 W. Liu\, C. Sun\, M.R. Zheng et al. // Nanoscale\, V.4\, P.976–981\, 201
 2\;\n 4. G.H.E. Al-Shabeeb\, A.K. Arof\, // Eur. Phys. J. Plus\, V.128\, P
 .1–8\, 2013\;\n 5. T. Kujofsa\, A. Antony\, S. Xhurxhi et al. // J. Elec
 tron. Mater. V.42\, P.3408–3420\, 2013\;\n 6. P.B. Rago\, E.N. Suarez\, 
 F.C. Jain\, J.E. Ayers // J. Electron. Mater. V.41\, P.2846–285\, 2012\;
 \n 7. Z. Wang\, X. Zhan\, Y. Wang et al // Appl. Phys. Lett. V.101\, P.073
 105-5\, 2012\;\n 8. Z. Wang\, H. Yin\, C. Jiang et al. // Appl. Phys. Lett
 . V.101\, P.253109-5. 2012\;\n 9. W. Zhou\, R. Liu\, D. Tang\, B. Zou // C
 ryst. Eng. Comm. V.15\, P.9988–9994\, 2013\;\n 10. S. Vijayalakshmi\, H.
  Grebe\, Z. Iqbal and C.W. White // J. Appl. Phys.\, V.84\, P.6502\, 1998\
 ;\n 11. P. Persans\, T. Hayes and L. Lurio\, // J. Non Cryst. Solids\, V.3
 49\, P.315-318\, 2004\;\n 12. N. Taghavinia and T. Yao // Physica E\, V.21
 \, P.96-102\, 2004.\n\nhttps://indico.inp.nsk.su/event/3/contributions/126
 2/
LOCATION:Budker INP 2nd and 3rd floors
URL:https://indico.inp.nsk.su/event/3/contributions/1262/
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