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SUMMARY:Raman scattering at terahertz frequencies enabled by an infrared f
 ree electron laser
DTSTART;VALUE=DATE-TIME:20160706T074000Z
DTEND;VALUE=DATE-TIME:20160706T080000Z
DTSTAMP;VALUE=DATE-TIME:20260313T113530Z
UID:indico-contribution-1280@indico.inp.nsk.su
DESCRIPTION:Speakers: Sergey Pavlov (German Aerospace Center)\nIn the last
  decade the use of infrared free electron laser facilities enabled observa
 tion of inelastic light (Raman) scattering in THz frequency range. Raman-a
 ctive intracenter donor transitions in silicon fall into the THz range and
  serve as outgoing resonances in electronic Stokes scattering. At photon f
 luxes above 1E24 photon/cm2/s donor-related Raman stimulated emission occu
 rs in the range 4.2-6.5 THz from natural and isotopically enriched silicon
  crystals with various dopants while the free electron laser wavelength wa
 s varied between 18 and 41 µm (7.5-16.5 THz). Study of dynamics of the ob
 served emission shows a transient picosecond-micropulse mode that indicate
 s on significantly larger Raman gain realized in THz Raman silicon lasers.
 \nThis research has been partly supported by the EC CALIPSO project for th
 e Transnational access to the European FELs and Synchrotron facilities as 
 well as joint German-Russian program “Research on technological advances
  of radiation sources of photons and neutrons based on accelerators and ne
 utron sources in cooperation with research organizations and universities 
 of the Federal Republic of Germany” (InTerFEL project\, BMBF No. 05K2014
  and the Russian Ministry of Science and Education (No. RFMEFl61614X0008).
 \n\nhttps://indico.inp.nsk.su/event/3/contributions/1280/
LOCATION:Budker INP Parallel session Hall
URL:https://indico.inp.nsk.su/event/3/contributions/1280/
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