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SUMMARY:Development of SOI pixel sensors
DTSTART;VALUE=DATE-TIME:20210317T034000Z
DTEND;VALUE=DATE-TIME:20210317T040000Z
DTSTAMP;VALUE=DATE-TIME:20260712T000200Z
UID:indico-contribution-2148@indico.inp.nsk.su
DESCRIPTION:Speakers: Toru Tsuboyama (KEK)\nSOI is a CMOS LIS technology w
 here the MOSFETs are produced on the SiO$_2$ layer  (BOX) above silicon wa
 fers. SOI pixel sensor utilize the silicon wafer as the radiation sensor a
 nd the signal induced in the wafer is processed by the CMOS circuit on BOX
 .  The parasitic capacitance of the circuit is smaller than that in the no
 rmal bulk CMOS\, the power consumption can be suppressed than the normal  
 (bulk) CMOS circuit.  By using the SOI pixel sensor technology\, we have d
 eveloped  pixel sensors. \n\nIn this talk\,  the sensors developed for the
  particle physics experiment will be presented.\n\nhttps://indico.inp.nsk.
 su/event/42/contributions/2148/
LOCATION:Budker INP
URL:https://indico.inp.nsk.su/event/42/contributions/2148/
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