24-28 February 2020
Budker Institute of Nuclear Physics
Asia/Novosibirsk timezone

Timing characterization of 3D-trench silicon sensors

26 Feb 2020, 12:10
20m
Contributed Oral Timing detectors Timing detectors

Speakers

Dr Adriano Lai (Istituto Nazione Fisica Nucleare (INFN) – Italy)Dr Alessandro CARDINI (INFN Sezione di Cagliari)

Description

Future tracking detectors have to be both space and time measuring devices at the single pixel level. This is strongly motivated by the extremely high interaction intensities foreseen in the collider experiments of the next couple of decades and possibly beyond. Presently, no satisfactory technical solutions are available and important development programs have started in this direction. Minimal requirements are: the capability to sustain fluences greater than some 1016 1 MeV neq cm-2 and radiation doses of some Grad, space resolutions around 10 µm and time resolutions below 50 ps. 3D silicon sensors are well known [1] for their very high radiation hardness (some 1016 n/cm2 [2]) and have intrinsic characteristics which can be exploited for fast response. During last year, tests have been made by the TIMESPOT collaboration on developed 55-µm-pitch 3D-trench sensor prototypes, giving extraordinarily good results in terms of timing. The tests have been performed both in the laboratory under a 1030 nm pulsed laser beam and under minimum ionizing particle beam at the PSI laboratories (Paul Scherrer Institute, Villigen, Switzerland). The tests yield values of time resolution of the order and below 30 ps rms. Such results indicate that, as of today, these devices are possibly the only ones capable to satisfy the complete set of system requirements for a future vertex detector and can be considered a very interesting solution to be further developed and finalized. An optimized new batch of sensors is under development and will be submitted early 2020. This paper will describe the characteristics of the developed sensors, the kind of measurements performed and will discuss the results obtained. The ongoing activity about further 3D sensor and fast front-end electronics developments will be also briefly illustrated. [1] C. Da Via et al., 3D Silicon Sensors: Design, large area production and quality assurance for the ATLAS IBL pixel detector upgrade, NIMA vol694 Dec. 2012. [2] J. Lange et al, Radiation hardness of small-pitch 3D pixel sensors up to a fluence of 3x1016 neq/cm2, 2018 JINST 13, P09009

Primary authors

Dr Adriano Lai (Istituto Nazione Fisica Nucleare (INFN) – Italy) Dr Alessandro CARDINI (INFN Sezione di Cagliari)

Presentation Materials