Speaker
Masao KURIKI
(Hiroshima University)
Description
NEA (Negative Electron Affinity) activated GaAs cathode is an unique device which can generate highly spin polarized electron beam. Because the NEA activation surface has a limited robustness, it is compatible only with a DC biased gun under an extremely good vacuum condition in order of 1e-10 Pa. We propose to improve the robustness by NEA activation with a stable semiconductor thin film. We performed the NEA activation with CsKTe thin layer and the robustness was examined. The operation lifetime was improved 20 times compared to that of the conventional NEA activation with Cs and Oxygen. Assuming the lifetime, operation with a RF gun is possible for 7 hours.
Primary author
Masao KURIKI
(Hiroshima University)
