Speaker
Toru Tsuboyama
(KEK)
Description
SOI is a CMOS LIS technology where the MOSFETs are produced on the SiO$_2$ layer (BOX) above silicon wafers. SOI pixel sensor utilize the silicon wafer as the radiation sensor and the signal induced in the wafer is processed by the CMOS circuit on BOX. The parasitic capacitance of the circuit is smaller than that in the normal bulk CMOS, the power consumption can be suppressed than the normal (bulk) CMOS circuit. By using the SOI pixel sensor technology, we have developed pixel sensors.
In this talk, the sensors developed for the particle physics experiment will be presented.
Primary author
Toru Tsuboyama
(KEK)
