from 24 February 2014 to 1 March 2014
Asia/Novosibirsk timezone
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Results on radiation hardness of avalanche photodiodes up to neutron fluences of 2.5×10¹⁴ n/cm²



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Abstract content

Results on the radiation hardness of avalanche photodiodes to fast neutrons are presented. APDs from Hamamatsu were irradiated with reactor neutrons up to 1 MeV equivalent fluence of 2.5×10¹⁴ n/cm². The effects of this radiation on many parameters such as gain, intrinsic dark current, quantum efficiency, noise and capacitance for these devices are shown and discussed.