Speaker
Mr
Vladimir Nazmov
(Budker Institute of Nuclear Physics)
Description
The negative tone electron beam resist ELN-200 has been developed in 80th years of the 20th century for thin film patterning. The sensitivity of the resist to X-rays has also been studied [E.S.Gluskin, A.A.Krasnoperova, G.N.Kulipanov, V.P.Nazmov, V.F.Pindurin, A.N.Skrinsky, V.V.Chesnokov, Experiments on X-ray lithography using synchrotron radiation from the VEPP-2M storage ring, Nuclear Instr.Meth. in Phys.Res.,v.208(1983) 393-398]. In the actual work, the X-ray lithographic properties of the resist have been studied after 33 years of storage. It was established that the contrast and the sensitivity of the resist to X-rays are not changed. The conditions of both formation of thick resist layers and manufacturing of high aspect ratio microstructures using hard X-rays are developed. The microstructures of up to 70 um in height have been manufactured. The roughness of vertical sidewalls of the microstructures doesn't exceed 50 nanometers.
Primary author
Mr
Vladimir Nazmov
(Budker Institute of Nuclear Physics)
Co-author
Dr
Boris Goldenberg
(Budker INP SB RAS)
