Speaker
Dr
Sergey Pavlov
(German Aerospace Center)
Description
In the last decade the use of infrared free electron laser facilities enabled observation of inelastic light (Raman) scattering in THz frequency range. Raman-active intracenter donor transitions in silicon fall into the THz range and serve as outgoing resonances in electronic Stokes scattering. At photon fluxes above 1E24 photon/cm2/s donor-related Raman stimulated emission occurs in the range 4.2-6.5 THz from natural and isotopically enriched silicon crystals with various dopants while the free electron laser wavelength was varied between 18 and 41 µm (7.5-16.5 THz). Study of dynamics of the observed emission shows a transient picosecond-micropulse mode that indicates on significantly larger Raman gain realized in THz Raman silicon lasers.
This research has been partly supported by the EC CALIPSO project for the Transnational access to the European FELs and Synchrotron facilities as well as joint German-Russian program “Research on technological advances of radiation sources of photons and neutrons based on accelerators and neutron sources in cooperation with research organizations and universities of the Federal Republic of Germany” (InTerFEL project, BMBF No. 05K2014 and the Russian Ministry of Science and Education (No. RFMEFl61614X0008).
Primary author
Dr
Sergey Pavlov
(German Aerospace Center)
Co-authors
Mr
A. Pohl
(Humboldt-Universität zu Berlin, Germany)
Dr
A.F.G. van der Meer
(FELIX Facility, Radboud University Nijmegen, The Netherlands)
Dr
B. Redlich
(FELIX Facility, Radboud University Nijmegen, The Netherlands)
Prof.
H. Schneider
(Institute of Ion Beam Physics and Materials Research, Helmholtz Zentrum Dresden–Rossendorf, Dresden, Germany)
Prof.
Heinz-Wilhelm Hübers
(German Aerospace Center (DLR) and Humboldt University Berlin)
Prof.
J.-M. Ortega
(Centre Laser Infrarouge d'Orsay, Université de Paris Sud, Laboratoire de Chimie Physique, Orsay, France)
Dr
N.V. Abrosimov
(Leibniz Institute of Crystal Growth, Berlin, Germany)
Mr
Nils Dessmann
(Humboldt-University Berlin)
Dr
R. Prazeres
(Centre Laser Infrarouge d'Orsay, Université de Paris Sud, Laboratoire de Chimie Physique, Orsay, France)
Dr
R.Kh. Zhukavin
(Institute for Physics of Microstructures, Nizhny Novgorod, Russia)
Dr
S. Winnerl
(Institute of Ion Beam Physics and Materials Research, Helmholtz Zentrum Dresden–Rossendorf, Dresden, Germany)
Prof.
Valery Shastin
(IPM RAS)
