Speaker
Mr
Vladislav Oleinikov
(Institute of Nuclear Physics 11, akademika Lavrentieva prospect, Novosibirsk, 630090 Russia)
Description
Silicon photomultipliers (SiPMs) have become extensive used recently. They exceed
photomultiplier tubes on quantum efficiency, size and resistance to the magnetic field.
However, due to the features of the structure they have a greater value of dark noise
rate, as well as they have additional sources of noise: cross-talk and after-pulsing. In
addition, these parameters may have a temperature dependence.
In this article we present results of a evaluation dark noise rate, probabilities of
cross-talk and after-pulses at different voltages and temperatures for two modern SiPM:
Hamamatsu S13360-3050CS and KETEK PM1125NS-SB0 and Hamamatsu S10362-11-
100C SiPM from the previous generation. An offline signal processing was performed by
a pulse approximation with reconstruction of amplitudes and start times to find these
parameters. As a result, we found that at achieved measurement accuracy the dark
noise rate has a temperature and a voltage dependence, but cross-talk and after-pulses
probabilities have only the latter.
Summary
The measured cross-talk probabilities for KETEK PM1125NS-SB0 and Hamamatsu
S13360-3050CS at their optimal operating voltage is about 6%, it is two times smaller
than that for Hamamatsu S10362-11-100C. The fast component of after-pulses probability
for KETEK PM1125NS-SB0 and Hamamatsu S13360-3050CS is about 12%, which is also almost 2 times smaller than sum of fast and slow components of afterpulses probability for Hamamatsu S10362-11-100C. The dark noise rate for Hamamatsu S13360-3050CS at 20 degree Celsius is only 30 𝑘𝐻𝑧/𝑚𝑚2 in comparison with 80 𝑘𝐻𝑧/𝑚𝑚2 for KETEK PM1125NS-SB0.
Primary author
Mr
Vladislav Oleinikov
(Institute of Nuclear Physics 11, akademika Lavrentieva prospect, Novosibirsk, 630090 Russia)
Co-author
Mr
Vyacheslav Porosev
(Budker Institute of Nuclear Physics SB RAS)
