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Contribution Oral

SR technological application and X-ray apparatus

X-ray diffraction imaging of three-dimensional location of linear crystalline defects

Speakers

  • Dr. Denis ZOLOTOV

Primary authors

  • Dr. Denis ZOLOTOV (Shubnikov Institute of Crystallography FSRC “Crystallography and Photonics” RAS)

Co-authors

Content

Nowadays, the development of modern microelectronics is due to the permanent improvement of non-destructive X-ray diffraction methods for studying microelectronics devices and semiconductor crystalline materials, which are used for. Intrinsic crystal structure defects often cause the deterioration parameters and characteristics of microelectronics. Thereby, identification of the imperfections of the spatial crystal structures is one of the most important study issues, particularly, from viewpoint of the development of non-destructive X-ray methods of diagnostics and control of the real structure of crystalline objects.

In the present work, based on the X-ray topo-tomography method elaborated [1], experimental and theoretical studies are described in application to linear defects in silicon single crystals. The corresponding 2D topographic dislocation images are simulated and analyzed by use of the numerical solutions of the Takagi-Taupin equations that describe the two-wave X-ray diffraction by distorted crystals. The 3D-image quantitative reconstruction of the dislocation half-loop near the crystal surface is done with estimating the dislocation sizes.

This work was supported by the Federal Agency of Scientific Organizations (Agreement No 007-ГЗ/Ч3363/26) in part of diffraction tomography experiments and by the Russian Foundation for Basic Research (project #17-29-03492) in part of reconstruction algorithms.

References

  1. D.A. Zolotov, A.V. Buzmakov, D.A. Elfimov et al. // Crystallography Reports, 2017, Vol. 62, No. 1, pp. 20–24