Spin-Resolved Photoemission for the investigation of Rashba spin-splitting and topological surface states

Not scheduled
Conference Hall (Budker INP)

Conference Hall

Budker INP

Lavrentiev av. 11, Novosibirsk 630090 Russia
Oral SR technological application and X-ray apparatus


Dr Oleg Tereshchenko (A.V. Rzanov Institute of Semiconductor Physics SB RAS)


The development of high-resolution angular resolved photoelectron spectroscopy (ARPES) and recent discovery of new quantum matter such as topological materials and Rashba systems with their peculiar spin-texture of the surface states stimulate to develop high-performance Spin-resolved ARPES (SARPES). Recent high-resolution radiation synchrotron sources and the newly developed high performance spin polarimeters open a new era of surface science using SARPES measurement. This allows solving one of the important problems of solid-state physics: the description of the electron freedom degree in a solid through the connection of the energy *E* with momentum *k* in a crystal and the band structure of quasiparticles. An important role belongs to the electron spin which determines such properties as ferromagnetism, spin-polarized surface and interface states, as well as unusual properties in topological insulators, in which a rigid link between the spin projection and the direction of the momentum is discovered. In the first part the problems of detecting the electron spin polarization using modern spin detectors with spatial resolution in the photoemission method with an angular resolution will be considered. The second part will be devoted to the study of spin-polarized Dirac states in three-dimensional topological insulators, including crystal topological insulators, in graphene-like bismuth monolayer, as well as the condition for the formation of a combined Dirac and Rashba electronic structure of the spin-polarized surface states. This work is partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70).

Primary author

Dr Oleg Tereshchenko (A.V. Rzanov Institute of Semiconductor Physics SB RAS)

Presentation Materials

There are no materials yet.