Speaker
Ms
Valeria Kukotenko
(Institute of Nuclear Physics)
Description
The detection mechanism of photoconductive detectors is the generation of free charge carriers upon absorption of photons whose energy is larger than the ionization energy. The relaxation of these carriers down to their ground state ultimately limits the speed of response as well as the sensitivity. A thorough understanding of the relaxation mechanism can help to improve the performance of detector devices. In case of extrinsic germanium detectors the ionization energy is in the THz range. In this paper we investigate the relaxation of excited carriers in n-Ge:As pumped into the lowest excited state 2p0 in a single color pump probe setup at the Novosibirsk free electron laser.
Primary author
Ms
Valeria Kukotenko
(Institute of Nuclear Physics)
Co-authors
Prof.
Boris Knyazev
(Budker Institute of Nuclear Physics)
Mr
Konstantin Kovalevsky
(Institute for Physics of Microstructures)
Mr
Roman Zhukavin
(Institute for Physics of Microstructures)
Mr
Vasily Gerasimov
(Budker Institute of Nuclear Physics SB RAS)
Ms
Yulia Choporova
(Budker Institute of Nuclear Physics)
