Synchrotron radiation induced photo etching of cesium iodide

Not scheduled
15m
Conference Hall (Budker INP)

Conference Hall

Budker INP

Lavrentiev av. 11, Novosibirsk 630090 Russia
Poster SR technological application and X-ray apparatus

Speaker

Mr Aleksey Lemzyakov (Budker INP SB RAS)

Description

Synchrotron radiation induced photo etching of cesium iodide (CsI) was investigated. The model for photo etching was proposed and compared with experimental data. Dependence of the etching rate on the SR spectrum and on the substrate temperature were revealed. We estimate possibility of manufacturing of high aspect ratio microstructures of CsI scintillation material. The work was done using the infrastructure of the Shared-Use Center “Siberian Synchrotron and Terahertz Radiation Center (SSTRC)” based on VEPP-3 of BINP SB RAS (Novosibirsk, Russian Federation).

Primary author

Mr Aleksey Lemzyakov (Budker INP SB RAS)

Co-authors

Dr Boris Goldenberg (Budker INP SB RAS) Mr Evgeny Kozyrev (BINP) Mr Vladimir Lyakh (Budker INP SB RAS) Mr Vladimir Nazmov (Budker Institute of Nuclear Physics)

Presentation Materials

There are no materials yet.